Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics 2018 (AP-HOPV18)
DOI: https://doi.org/10.29363/nanoge.ap-hopv.2018.057
Publication date: 27th October 2017
Recently, perovskite solar cell has attracted much attention as a next generation solar cell. In the solar cell, besides absorber layer material, the electron-selective layer (ESL) material is also very important. The ESL is not only crucial to achieving high photovoltaic conversion efficiency (PCE), but also for the device stability. Compared with other metal oxide, ZnO is a particularly promising ESL, because of its high transparency, suitable work function, and high electron mobility.In addition, low-content doping/modification of metal oxides has been considered as a way of improving the selectivity of ESLs. In this talk, we will focus on our recent research results of MAPbI3 perovskite (PVK) solar cells using Zn1-xMgxO thin film as ESLs. We find that the photovoltaic performance, especially Voc depends greatly on x. The devices based on Zn0.9Mg0.1O ESL exhibited the best photovoltaic performance and a PCE of ~15.5% was achieved.Electron injection and recombination dynamics at the interface have been characterized. The electron injection time is almost the same around 6 ns for all of FTO/Zn1-xMgxO/PVK (x: 0 – 0.2). However, the recombination time becomes longer as x increases from 0 to 0.1, and then becomes shorter with x increases up to 0.2. We find that the recombination process is affected by two factors:(1) the conduction band position of Zn1-xMgxO, which increases as x becomes larger; (2) the defect intensity in Zn1-xMgxO, which is smallest at x=0.1 and increases as x increases. These results indicate that the energy level alignment and physical properties of the electron selection layer in the perovskite solar cells are very important for improving the energy conversion efficiency.