Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Publication date: 7th November 2016
Compared with conventional solar cells, quantum dot solar cells (QDSCs) are easier to prepare with low fabrication cost. Additionally, QDs present high extinction coefficients, tunable absorption spectra, and multiple exciton generation (MEG) effect. PbS and PbSe QDs have attracted attention due to their small bulk bandgap, high dielectric constant, and large exciton Bohr radius. However, due to the QDs have large surface area, there are more surface defects on QDs than that of their bulk materials. So the charge carrier recombination at QDs’ surface have a decisive impact on the QDSCs performance. What’s more, the interface recombination also plays an important part to affect the property of the QDSCs. Therefore, reducing and inhibiting the surface and interface recombination in QDSCs are an effective way to improve the performance of PbS and PbSe based QDSCs. Here, we modified the PbSe QDs surface by using halide ion ligands. After modification, the air stability of PbSe QDs and QDSCs treated by halide ion ligands were enhanced than short organic ligands, and the QDSCs treated by I- obtained the best performance. In order to inhibit the interface recombination at PbS QDs/Au, we introduced organic small molecules as hole transport materials (HTMs) at PbS/Au interface. We found that the device with HTMs obtained higher open circuit voltage (Voc) and larger fill factor (FF) than the devices which without using HTMs. The results of open-circuit transient voltage decay and electrochemical impedance spectroscopy measurements indicated that there is less interface recombination in the devices with HTMs than those devices without using the HTMs.