Hetero-interfaces for Perovskite Solar Cells Consisting of Sn
Tingli Ma a, Daisuke Hirotani a, Shohei Moriya a, Kengo Hamada a, Hu Zhaosheng a, Shaym Pandey a, Yuhei Ogomi a, Shuzi Hayase a, Teresa Ripolles a, Taro Toyoda b, Qing Shen b, Kenji Yoshino c, Takashi Minemoto d
a Kyushu Institute of Technology, Japan, 204 Hibikino Wakamatsu-ku, Kitakyushu - Fukuoka, 808, Japan
b The University of Electro-communications, 1-5 Chofugaoka, Chofu, Yokyo, Japan
c University of Miyazaki, 1-1 Gakuen Kibanadai, Miyazaki, 889, Japan
d Ritsumeikan University, 1-1-1 norohigashi Kusatsu, Japan
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Oral, Shuzi Hayase, presentation 101
Publication date: 7th November 2016

 Hybrid perovskite solar cells (PVK solar cell) have attracted interest because of the high efficiency.  In this presentation, the relationship between photovoltaic performances and interface structure are reported. We have reported that the interface between TiO2 and perovskite layer has passivation structure consisting of Ti-O-Pb-I which decreases the trap density of the interfaces and suppresses charge recombination (1-4). The interface of hole transport layer/perovskite layer, and between perovskite layer /perovskite layer (grain boundary) was passivated with organic amines in the same way (5).  The passivation was also effective for increasing Voc and Jsc (Efficiency: 17.5%). This was explained by the results of transient absorption spectroscopy that the charge recombination time between hole transport payer/perovskite layer increased from 0.3 to 60 μsec. In our simulation, maximum efficiency can be obtained by harvesting light from visible region up to 900nm, supposing that voltage loss is 0.4 V.  However, absorption edge of MAPbI3 is 800nm. One of the expected candidates for the light absorber is PVK consisting of Sn, because Sn perovskite has light absorption up to 1200nm (6). The enhancement of mixed metal perovskite (MAPbSnI3) showing photoconversion in IR region are reported from the view point of interface architecture (6). In the case of PVK consisting of Sn, it was found that Ti-O-Sn bonding is formed at the interface between tiania and Sn-PVK layer, and creates traps, resulting in increasing charge recombination.  In order to decrease the Ti-O-Sn bond density on titania, efficiency increased from 4% to 8%.  In addition, TCO-less PVK solar cells are also reported from the view point of interface architecture. 1.S. Nakabayashi, et al., J. Photonics for Energy; 2015, 5, 057410; 2. Y. Ogomi, et al., J. Phys. Chem. C, 2014, 118, 16651-16659; 3. Q. Shen, et al., Phys. Chem. Chem. Phys. 2014, 19984-19992; 4. Y. Ogomi, et al., Chem. Phys. Chem. 2014, 15, 1062-1069; 5. H. Moriya, et al., Chem. Sus. Chem. In press (2016); 6. Y. Ogomi, et al., J. Phys. Chem. Lett. 2014, 5, 1004-1011.



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