Fabrication of Solution Processed 3-D CuInGaS2 Thin Film Solar Cells Using Various ITO Nanorod Back Contact Electrodes
Van-Ben Chu a b, Byoung Koun Min  a b, Young Rag Do c
a Clean Energy Research Center, Korea Institute of Science and Technology, 39-1 Hawolgok-dong, Seongbuk-gu, Seoul, 136, Korea, Republic of
b Korea University, Korea, Republic of
c Department of Chemistry, Kookmin University, Jeongneung-dong, Seongbuk-gu, Seoul 02707, Korea, Republic of
Asia-Pacific International Conference on Perovskite, Organic Photovoltaics and Optoelectronics
Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Yokohama-shi, Japan, 2017 February 2nd - 4th
Organizers: Tsutomu Miyasaka and Iván Mora-Seró
Oral, Van-Ben Chu, presentation 099
Publication date: 7th November 2016

Efficient light management in thin film solar cell plays a significant role to enhance their performance. In this study, we integrated one-dimensional ITO nanorods in CIGS films to fabricate 3-D nanostructured thin film solar cells. To achieve 3-D nanostructured CIGS thin film solar cells, 400nm, 600nm and 1000nm ITO nanorod films were used as back contact electrodes. The precursor solution of Cu, In, and Ga with and without binder material were synthesized to fill the ITO nanorods gap and increase the thickness of CIGS films. Heat treatment processes in air and in H2S environment were applied to form polycrystalline CIGS films with minimized carbon impurities. 3-D nanostructured solar cell devices with Al,Ni/AZO/i-ZnO/CdS/CIGS/ITO nanorods/Glass structures were fabricated and characterized showing the highest power conversion efficiency of 6% at standard one Sun irradiation conditions for 600nm ITO nanorods. The best performance of 600 nm NRs solar cell device will be explained by enhanced of light absorption and gap filling.



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