Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Publication date: 7th November 2016
Bismuth based perovskite with the structure (CH3NH3)3Bi2I9 (MBI) are rapidly emerging as eco-friendly and stable semiconducting material as a substitute for the lead halide perovskites. Relatively higher bandgap of MBI (about 2.1 eV) has been found to be a bottle-neck in realizing the high photovoltaic performance similar to that of lead halide based perovskites. We would like to demonstrate the bandgap engineering of novel bismuth based perovskites obtained by in-situ sulfur doping of MBI via the thermal decomposition of Bi(xt)3 (xt = Ethyl Xanthate) precursor. Color of the obtained films were clearly changed from orange to black when annealed from 80áµ’C to 120áµ’C. Formation of sulfur doped MA3Bi2I9 was confirmed by XRD and the presence of sulfur was confirmed through XPS. In this work, obtained sulfur doped bismuth perovskites exhibited a bandgap of 1.45 eV which is even lower than that of most commonly used lead halide perovskites. Hall-Effect measurements showed that the carrier concentration and mobility are much higher as compared to that of undoped MA3Bi2I9.
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