Proceedings of International Conference Asia-Pacific Hybrid and Organic Photovoltaics (AP-HOPV17)
Publication date: 7th November 2016
We studied the effects of post-synthesis thermal treatments on material properties of CH3NH3PbI3 perovskite films and their photovoltaic performance focusing on fundamental material properties. Perovskite thin films with different annealing duration showed different grain morphology and film quality confirmed by scanning electron microscope (SEM) and XRD. Kelvin probe force microscopy revealed the existence of a positive potential barrier at grain boundaries, which is known to be beneficial by suppressing carrier recombination. The height of the barrier increased with the annealing duration, which directly correlated with the device performance. The origin of the potential barrier appeared to be chemical inhomogeneity as revealed by Nano-Auger electron spectroscopy. Qualitatively similar temperature-dependence of current-density vs bias characteristics were observed regardless of the annealing duration, where efficiency collapsed at low temperatures due to a diverging series resistance. The freeze-out of free carries and/or a Schottky-type barrier(s) at the interface(s) is likely responsible for the diverging series resistance.