Proceedings of International Conference on Perovskite Thin Film Photovoltaics, Photonics and Optoelectronics (ABXPV18PEROPTO)
DOI: https://doi.org/10.29363/nanoge.abxpvperopto.2018.116
Publication date: 11th December 2017
Hybrid inorganic-organic halide perovskites attract much attention for their application in optoelectronic devices. However, the performance in domain such as photovoltaics still strongly depends on the quality of the active layers and their capacity to withstand device operation without irreversible damage. Applying a bias in dark in CH3NH3PbI3 (MAPI) based solar cells results in ion migration [1]. This questions the generation and role of defects under bias and light illumination [2] on photovoltaics performance.
In this work, Helium ion implantation is used as a tool for the introduction of point defects in a controlled way in polycrystalline MAPI layers spin coated on glass/ITO/PEDOTT:PSS. The created point defects may introduce energy levels and modify electronic and light emitting properties of the material. The defect production has a strong effect on the photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra. The results illustrate how the PL and RTPL properties depend on the layer history before and after He ion implantation.
[1] Lee et al., Direct Experimental Evidence of Halide Ionic Migration under Bias in CH3NH3PbI3-xClx Based Perovskite Solar Cells using GD-OES Analysis, ACS Energy Lett., 2017 DOI: 10.1021/acsenergylett.7b00150
[2] DeQuilettes et al., Photo-induced halide redistribution in organic–inorganic perovskite films, Nature Communications, 2016 DOI: 10.1038/ncomms11683
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