Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
Publication date: 18th December 2016
Physical modeling of hysteretic behavior in I-V curves of perovskite solar cells (PSCs) is necessary for further understanding of power generation mechanism and improvements of power conversion efficiencies (PCEs). In some cases, reduction of hysteresis in planar structure PSC (p-PSCs) has been achieved by using PCBM layer mostly for inverted structure. In such cases, the opposite trend of the I-V hysteresis, where the forward scan shows higher efficiency than that of reverse scan has been observed. In this paper, an equivalent circuit model with inductance was newly proposed. This model consists of Schottky diode (SBD) involving parasite inductance focusing PCBM/Al(Ca) interface and well represents the opposite I-V hysteresis of the p-PSC with inverted structure. Furthermore, based on the equivalent circuit we have constructed physical real device composed of 2 Si photo diodes and a diode, an inductor and resistor. Photovoltaic response for modeled perovskite solar cells based on equivalent circuit with 2 Si photo diodes, a diode, an inductor and resistor. The I-V curves for this device well supported our equivalent circuit having 2 Si photodiode and SBD diode, and conclude that the inverted trend of hysteresis is coming from the inductance originated from the interface PCBM/Al(Ca).
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