Proceedings of Perovskite Thin Film Photovoltaics (ABXPV17)
Publication date: 18th December 2016
Methylammonium lead iodide perovskites (MAPI) are generally considered direct bandgap semiconductors. However, theoretical calculations have predicted a slight indirect bandgap for MAPI as a consequence of spin-orbit coupling resulting in Rashba-splitting of the conduction band. Currently there is limited experimental evidence to support this theoretical prediction. Using pressure-dependent absorption and emission measurements, we show that a weakly indirect bandgap around 60 meV below the direct bandgap transition is present. Under hydrostatic pressure from ambient to 325 MPa, Rashba splitting is reduced due to a pressure-induced reduction in electric field around the Pb atom. The indirect nature of the bandgap is suppressed, leading to five times faster charge carrier recombination, and a two-fold increase of the radiative efficiency. At hydrostatic pressures above 325 MPa, a reversible phase transition of MAPI occurs, resulting in a purely direct bandgap semiconductor.The finding of an indirect bandgap in MAPI sheds light on the apparent contradiction of strong absorption and long charge carrier lifetime. Novel epitaxial and synthetic routes to higher efficiency optoelectronic devices might be developed based on the pressure-induced changes we observe.