Investigation of Cuprous Oxide (Cu2O) as Hole Transport Layer in hybrid Lead Halide Perovskite Solar Cells

Raheleh Mohammadpoura^a, Leyla Shooshtari^a, Azam Irajizada^a^,^c, Antonio Guerrero^b, Juan Bisquert^b^,^d

^aInstitute of Nanoscience and Nanotechnology, Sharif University of Technology Tehran, Iran, Tehran, 14588

^bPhysics Department, Sharif University of Technology, Tehran 14588, Iran, Islamic Republic of

^cDepartment of Chemistry, Faculty of Science, King Abdulaziz University, Jeddah

NIPHO
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)

Barcelona, Spain, 2016 March 3rd - 4th

Organizers: Emilio Palomares and Nam-Gyu Park

Poster, Leyla Shooshtari, 076
Publication date: 14th December 2015

Perovskite photovoltaic (PV) materials constitute an emerging PV technology due to their high potential to provide low production costs and highly efficient devices. With composition engineering, power conversion efficiency (PCE) exceeding 20% have been obtained [1,2]. Further improvement is expected by a careful selection of the external contacts which should provide selectivity to one of the charge carriers. Beside high efficiency, cost and stability are key parameters for these solar cells to reach maturity. Currently used materials as Hole Transport Layer (HTL) include spiro-MeOTAD, PEDOT: PSS, NiOx, CuI or CuSCN. [3-5]. Cuprous oxide (Cu2O) with direct bandgap of about 2.1 eV is also an attractive candidate due to the low production costs and due to the non-toxic nature of this p-type material [6]. In this study, Cu2O is electrodeposited on Indium Tin doped Oxide (ITO) with several thicknesses being accessed by controlling the total charge in the deposition procedure. First, Cu2O is fully characterized by SEM, absorption measurements, Kelvin Probe and impedance spectroscopy. All these techniques suggest that electrodeposited Cu2O may be used as adequate HTL. Finally, devices are fabricated in the inverted architecture (ITO/Cu2O/MAPI/PCBM/Au) to understand the scope of using this material as an efficient HTL.

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