Material Exchange Property of Organo Lead Halide Perovskite with Hole-Transporting Materials
a University of Hyogo, 2167 Shosha, Himeji, 671, Japan
NIPHO
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)
Barcelona, Spain, 2016 March 3rd - 4th
Organizers: Emilio Palomares and Nam-Gyu Park
Oral, Seigo Ito, presentation 074
Publication date: 14th December 2015
Publication date: 14th December 2015
Using X-ray diffraction (XRD), it was confirmed that the deposition of hole-transporting materials (HTM) on a CH3NH3PbI3 perovskite layer changed the CH3NH3PbI3 perovskite crystal, which was due to the material exchanging phenomena between the CH3NH3PbI3 perovskite and HTM layers. The solvent for HTM also changed the perovskite crystal. In order to suppress the crystal change, doping by chloride ion, bromide ion and 5-aminovaleric acid wasattempted. However, the doping was unable to stabilize the perovskite crystal against HTM deposition. It can be concluded that the CH3NH3PbI3 perovskite crystal is too soft and flexible to stabilize against HTM deposition.
Keywords:CuSCN, cupper thiocyanate, inter diffusion, stability, material exchanging
© FUNDACIO DE LA COMUNITAT VALENCIANA SCITO