Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)
Publication date: 14th December 2015
The optoelectronic response of perovskite solar cells (PSCs) is strongly dependent on their prior electrical and optical conditioning. First observed as an anomalous hysteresis in the characteristic current-voltage scan of devices, many recent publications attribute this effect to the slow migration of ionic charge in response to an applied or built-in electric field. The same effect is responsible for a slow transient relaxation of the cell open circuit voltage (VOC) to a steady state after electronic biasing. In this study we use transient photovoltage (TPV) measurements to monitor the recombination kinetics of a variety of PSC device architectures throughout the slow VOC transient. We find that in planar, bottom-cathode devices this change in VOC cannot be explained by a change in charge carrier lifetime. Additionally we observe that after preconditioning these devices with forward bias in the dark, the TPV magnitude is temporarily enhanced on the timescale of the VOC relaxation. Significantly, after pre-conditioning with reverse bias, hysteretic devices exhibit a temporary negative TPV deflection. We interpret this as direct evidence for the presence of a reverse electric field within the perovskite layer. Supported by drift and diffusion modelling, we show that the experimental results strongly support the prevailing theories describing a compensatory electric field within hysteretic devices. We conclude by simulating the transient response of different device architectures and show how the experimental results can be understood through a combination of trapped ionic and electronic charge within the perovskite layer.
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