Interface Engineering in Metal Halides Perovskites: from molecules to devices.
Annamaria Petrozza a
NIPHO
Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)
Barcelona, Spain, 2016 March 3rd - 4th
Organizers: Emilio Palomares and Nam-Gyu Park
Invited Speaker, Annamaria Petrozza, presentation 038
Publication date: 14th December 2015

In this talk we review our recent studies which aim to clarify the relationship between structural and electronic properties from a molecular to mesoscopic level.  First we identify the markers for local disorder at molecular level by using Raman Spectroscopy as a probe. Then, we exploit such a tool to explore the role of microstructure on the absorption and emission properties of the semiconductor looking both at polycrystalline thin films and single crystals.  We address the controversy surrounding electron – hole interactions and excitonic effects. We show that in hybrid lead-halide perovskites dielectric screening also depends on the local microstructure of the hybrid crystals and not only on its chemical composition. This leads to the possibility of band gap engineering and the consequent control of the elementary photo-excitation dynamics that determine the perovskites’ performances in different optoelectronic devices. Finally, the role of interface engineering, the effect of ion migration, and interface doping on charge extraction in diode structures will be elucidated to provide a guideline for the design of hysteresis free solar cells.



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