Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)
Publication date: 14th December 2015
We report new developments on process optimization for the crystallization of ABX3 perovskites and its structural and photophysical characterization to facilitate stable devices. For this, highly air-stable CH3NH3IPbI3 perovskite was synthesized and integrated with TiO2 as electron extraction layer and spiro-OMeTAD as hole extraction layer. Perovskite layer was fabricated by allowing CH3NH3I (MAI)- vapor to interact with PbI2 layer coated on TiO2. Unlike as reported in literature, no residual PbI2 is necessary to obtain high power conversion efficieny. This process is thoroughly optimized to get uniform, pore-free, compact and highly stable crystalline layer of CH3NH3IPbI3 for small (0.16 cm2) and large area (1.05 cm2) devices. The extraordinary stability of this pristine perovskite layer for about 3 months in air was compared with those obtained from other crystallization methods using XRD studies. The solar cell optimization reveals that the 370 nm thick perovskite layer delivers highly reproducible devices with an yield of 97% and a PCE of about 15% (average PCE: 13.4%) with very negligible parameter fluctuation (statistics of 35 devices prepared from 4 different batches) and a stability of more than one month with negligible loss in efficiency. Additionally, we demonstrate that this MAI-vapor assisted method is suitable to fabricate devices having an area of 1.05 cm2 with the devices efficiency of 8.7%. Photoluminescence studies and the role of residual PbI2 on photophysics, solar cell performance and stability is additionally discussed. These findings give very surprising and interesting insights to realize reproducibe and stable devices towards a technology based on perovskite solar cells.
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