Proceedings of Perovskite Thin Film Photovoltaics (ABXPV16)
Publication date: 14th December 2015
Ensuring the long-term stability of PSCs under operational conditions is crucial for their implementation into commercial large-scale applications. However, solar cells comprising methylammonium lead iodide (MAPI) are notorious for their sensitivity to moisture and undergo a crystal phase transition at standard solar cell operating temperatures. Here, I will show that hydrated crystal phases are formed when MAPI is exposed to moist air at room temperature and that these phase changes can be fully reversed when the material is subsequently dried. An option for more temperature stable alternatives to MAPI without phase transitions in the solar cell operating temperature regime exist in the form of formamidinium lead iodide (FAPI). I will show that the inclusion of a small amount of methylammonium in the FAPI crystal structure stabilizes the characteristic pseudocubic high-temperature phase at all studied temperatures (RT-220 C).
Furthermore, the typically used hole-conducting material “Spiro-OMeTAD” is expensive to produce and will result in a large fraction of the module cost once it’s implemented in commercial applications. Here, we have developed a low-cost alternative using well known condensation chemistry. We prepared an azomethine-based hole transporter (EDOT-OMeTPA) which achieves comparable power conversion efficiencies to Spiro-OMeTAD in planar heterojunction solar cells, with one order of magnitude reduction in the estimated material cost. Understanding charge transport mechanisms in photovoltaic materials is crucial in order to realize the system’s potential. Here, I will present a novel approach for a contact-less visualization of the charge carrier diffusion length and speed in thin films based on time-resolved confocal detection of photoluminescence at varying distances from the excitation position. Our measurements on chloride-treated MAPI thin films reveal a charge carrier diffusion length of more than 5 μm and a transport time of 100 ps for the first micrometer corresponding to a diffusion constant of ~5-10 cm2s−1, similar to GaAs.
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